Plasma etching skill for anisotropic nanostructure patterning with selectivity and profile control
Scanned 9/2/2026
Install to Claude Code
npx -y skills add a5c-ai/babysitter --skill plasma-etch-controller --agent claude-codeInstalls into .claude/skills of the current project.
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---
name: plasma-etch-controller
description: Plasma etching skill for anisotropic nanostructure patterning with selectivity and profile control
allowed-tools:
- Read
- Write
- Glob
- Grep
- Bash
metadata:
specialization: nanotechnology
domain: science
category: fabrication
priority: high
phase: 6
tools-libraries:
- Etch simulators
- OES/interferometry analysis
graph:
domains: [domain:nanotechnology]
skillAreas: [skill-area:mathematical-reasoning, skill-area:physics-simulation, skill-area:data-analysis]
workflows: [workflow:experiment-design]
roles: [role:research-engineer]
---
# Plasma Etch Controller
## Purpose
The Plasma Etch Controller skill provides comprehensive plasma etching process control for nanofabrication, enabling anisotropic pattern transfer with optimized selectivity, profile control, and minimal damage.
## Capabilities
- Etch chemistry selection
- Anisotropy and selectivity optimization
- Endpoint detection
- Profile and sidewall angle control
- Loading effect compensation
- Plasma damage assessment
## Usage Guidelines
### Plasma Etch Process
1. **Chemistry Selection**
- Match chemistry to material
- Consider selectivity requirements
- Address sidewall passivation
2. **Profile Control**
- Optimize ion energy
- Balance chemical and physical
- Control sidewall angle
3. **Endpoint Detection**
- Use OES for species monitoring
- Apply interferometry
- Implement time-based backup
## Process Integration
- Nanolithography Process Development
- Nanodevice Integration Process Flow
## Input Schema
```json
{
"material": "string",
"mask_type": "string",
"target_depth": "number (nm)",
"feature_cd": "number (nm)",
"selectivity_requirements": {
"to_mask": "number",
"to_underlayer": "number"
}
}
```
## Output Schema
```json
{
"etch_recipe": {
"gases": [{"gas": "string", "flow": "number (sccm)"}],
"pressure": "number (mTorr)",
"rf_power": "number (W)",
"bias_power": "number (W)"
},
"etch_rate": "number (nm/min)",
"selectivity": {
"to_mask": "number",
"to_underlayer": "number"
},
"sidewall_angle": "number (degrees)",
"uniformity": "number (%)"
}
```
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